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FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET
February 2006
FRFET
FQP6N40CF/FQPF6N40CF
400V N-Channel MOSFET
Features
* 6A, 400V, RDS(on) = 1.1 @VGS = 10 V * Low gate charge ( typical 16nC) * Low Crss ( typical 15pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * Fast recovery body diode (typical 70ns)
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
D
G GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current
Parameter
Drain-Source Voltage - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
FQP6N40CF
6 3.6 24
FQPF6N40CF
400 6* 3.6* 24* 30 270 6 73 4.5
Units
V A A A V mJ A mJ V/ns
73 0.58 -55 to +150 300
38 0.3
W W/C C C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
FQP6N40CF
1.71 0.5 62.5
FQPF6N40CF
3.31 -62.5
Units
C/W C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
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FQP6N40CF/FQPF6N40CF Rev. B
FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking FQP6N40CF FQPF6N40CF Device FQP6N40CF FQPF6N40CF Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics
Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR Parameter
TC = 25C unless otherwise noted
Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 400 V, VGS = 0 V VDS = 320 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
Min. 400 ------
Typ. -0.54 -----
Max. --1 10 100 -100
Units V V/C A A nA nA
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 3 A VDS = 40 V, ID = 3 A
(Note 4)
2.0 ---
-0.9 4.7
4.0 1.1 --
V S
Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---480 80 15 625 105 20 pF pF pF
Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 320 V, ID = 6 A, VGS = 10 V
(Note 4, 5) (Note 4, 5)
VDD = 200 V, ID = 6 A, RG = 25
--------
13 65 21 38 16 2.3 8.2
35 140 55 85 20 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 13.7mH, IAS = 6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 6A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 6 A VGS = 0 V, IS = 6 A, dIF / dt = 100 A/s
(Note 4)
------
---70 0.12
6 24 1.4 ---
A A V ns C
FQP6N40CF/FQPF6N40CF Rev. B
2
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FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
10
1
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top :
10
1
150 C 25 C
10
0
o
10
0
o
-55 C
o
10
-1
Notes : 1. 250 s Pulse Test 2. TC = 25
-1
Notes : 1. VDS = 40V 2. 250 s Pulse Test
10
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
3.5
10
1
RDS(ON) [ ], Drain-Source On-Resistance
3.0
2.5
VGS = 10V
2.0
IDR, Reverse Drain Current [A]
10
0
1.5
VGS = 20V
1.0
Note : TJ = 25
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0.5
0
5
10
15
20
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
1200
Figure 6. Gate Charge Characteristics
12
1000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VDS = 80V
10
VGS, Gate-Source Voltage [V]
VDS = 200V
8
Capacitances [pF]
800
Ciss
600
VDS = 320V
Coss
6
400
Crss
200
Note ; 1. VGS = 0 V 2. f = 1 MHz
4
2
Note : ID = 6A
0 -1 10
10
0
10
1
0
0
5
10
15
20
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FQP6N40CF/FQPF6N40CF Rev. B
3
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FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 3 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area for FQP6N40CF
2
Figure 9-2. Maximum Safe Operating Area for FQPF6N40CF
10
Operation in This Area is Limited by R DS(on)
1
10
2
10 s 100 s
Operation in This Area is Limited by R DS(on)
10 s
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms 10 ms 100 ms
10
0
10
1
1 ms 10 ms 100 ms DC
100 s
DC
10
0
10
-1
Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse
10
-1
Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse
0 1 2 3
10
-2
10
0
10
1
10
2
10
3
10
-2
10
10
10
10
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
6
5
ID, Drain Current [A]
4
3
2
1
0 25
50
75
100
125
150
TC, Case Temperature [ ]
FQP6N40CF/FQPF6N40CF Rev. B
4
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FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP6N40CF
10
0
D = 0 .5 0 .2 0 .1
N o te s : 1 . Z J C (t) = 1 .7 1 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
Z JC(t), Thermal Response
10
-1
0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
PDM t1 t2
0 1
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF6N40CF
D = 0 .5
Z JC(t), Thermal Response
10
0
0 .2 0 .1 0 .0 5
10
-1
N o te s : 1 . Z J C (t) = 3 .3 1 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
0 .0 2 0 .0 1 s in g le p u ls e
PDM t1 t2
0
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FQP6N40CF/FQPF6N40CF Rev. B
5
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FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQP6N40CF/FQPF6N40CF Rev. B
6
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FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQP6N40CF/FQPF6N40CF Rev. B
7
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FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
FQP6N40CF/FQPF6N40CF Rev. B
8
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FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET
Mechanical Dimensions
(Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
FQP6N40CF/FQPF6N40CF Rev. B
9
15.87 0.20
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FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM
Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM
PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3
SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I18
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
10 FQP6N40CF/FQPF6N40CF Rev. B
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